A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO ispresented, where the two CoFeB layers are separated by a Ta interlayer ofvarying thickness $t$. The magnetization properties deduced from complementarytechniques such as superconducting quantum interference magnetometry,ferromagnetic resonance frequency measurements and Brillouin light scatteringspectroscopy can be tuned by changing the Ta thickness between $t$=0.25 nm, 0.5nm and 0.75 nm. For $t$=0.5 nm, a ferromagnetic coupling is observed, whereasfor t=0.75 nm, the antiferromagnetic coupling needed to construct a syntheticferrimagnet is realized. In the later case, the shape of magnetic domain wallsbetween two ferrimagnetic alignments or between a ferro- and a ferrimagneticalignment is very different. This behavior can be interpreted as a result ofthe change in dipolar as well as interlayer exchange energy and domain wallpinning, which is an important conclusion for the realization of data storagedevices based on synthetic ferri- and antiferromagnets.
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机译：提出了对多层体系MgO / CoFeB（1.1nm）/ Ta（$ t $）/ CoFeB（0.8nm）/ MgO的研究，其中两个CoFeB层被厚度为$ t $的Ta中间层隔开。可以通过在$ t $ = 0.25 nm，0.5nm和0.75 nm之间改变Ta厚度来调整由互补技术（例如超导量子干涉磁法，铁磁共振频率测量和布里渊光散射光谱法）推导的磁化性质。对于$ t $ = 0.5 nm，观察到铁磁耦合，而对于t = 0.75 nm，实现构造合成铁磁体所需的反铁磁耦合。在后一种情况下，两个亚铁磁排列之间或铁与亚铁磁排列之间的磁畴壁的形状非常不同。这种行为可以解释为偶极子以及层间交换能量和畴壁钉扎的变化的结果，这对于实现基于合成铁磁和反铁磁的数据存储设备是一个重要的结论。
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